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3D NAND: Making a Vertical String
Let’s look at how one form of 3D NAND is manufactured. For this post we will explore the original design suggested by Toshiba at the IEEE’s International Electron Device Meeting (IEDM) in 2007. It’s...
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An Alternative Kind of Vertical 3D NAND String
My prior 3D NAND post explained how Toshiba’s BiCS cell works, using a silicon nitride charge trap to substitute for a floating gate. This post will look at an alternative technology used by Samsung...
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